发明名称 THIN FILM TRANSISTOR ARRAY SUBSTRATE
摘要 <p>PROBLEM TO BE SOLVED: To obtain the thin film transistor(TFT) array substrate which is reducible in the capacity formed by a drain electrode and a gate wire and therefore made small in hold capacity, and improved in aperture rate. SOLUTION: This TFT array substrate has a wire part, connecting a source electrode 9 of a TFT from a source wire 4, formed partially or entire on a gate wire 3, the source electrode 9 of the TFT is so formed as to form a channel shape together with part of the source wire 4, and the drain electrode 7 of the TFT is formed while surrounded with the source electrode 9; and the drain electrode 7 and a pixel electrode 6 are connected in the corresponding pixel and a space which is large enough to disconnect the drain electrode 7 and pixel electrode 6 by a laser is left at the periphery of the drain wire 11.</p>
申请公布号 JPH10228031(A) 申请公布日期 1998.08.25
申请号 JP19970030114 申请日期 1997.02.14
申请人 ADVANCED DISPLAY:KK 发明人 NAKAYAMA AKIO
分类号 G02F1/136;G02F1/1368;H01L29/786;(IPC1-7):G02F1/136 主分类号 G02F1/136
代理机构 代理人
主权项
地址