发明名称 |
IGBT with integrated control |
摘要 |
A monolithic IGBT and control circuit therefor are integrated into a common chip. The IGBT is formed in a first area of the chip and the control circuit is formed in a second laterally spaced area and in a P well. Means are provided to prevent hole injection from the P+ substrate into the P well during IGBT operation. The means includes a sufficient spacing between the areas; a P+ collection region between the areas or an N+ diffusion between the areas which is connected to the P+ substrate. The areas are surrounded by a common field termination structure which, however, leaves a small surface bridge between the two areas. Control conductors from the control area to the IGBT area cross over the narrow area, and not over the field terminations. A lateral PNP transistor which is integrated in the chip and is external of the IGBT area is connected to the central N+ diffusion between IGBT and control areas and permits its connection to the P type substrate only when the IGBT area conducts.
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申请公布号 |
US5798538(A) |
申请公布日期 |
1998.08.25 |
申请号 |
US19950560328 |
申请日期 |
1995.11.17 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
NADD, BRUNO C.;RANJAN, NIRAJ |
分类号 |
H01L29/78;H01L21/76;H01L27/06;H01L27/088;H01L29/06;H01L29/10;H01L29/40;H01L29/739;(IPC1-7):H01L29/74;H01L23/58;H01L31/141 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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