摘要 |
A metalorganic arsenic source comprising R3-mAsHm, where R is an organic radical selected from the group consisting of CnH2n+1 and CnH2n-1, where n ranges from 1 to 6, and where m is 1 or 2, such as tert-butylarsine (t-BuAsH2), is useful in terminating a silicon surface with arsenic without carbon contamination, thereby permitting subsequent growth of high quality II-VI films, such as ZnSe. Use of this metalorganic arsenic source allows the full potential of the metalorganic molecular beam epitaxy (MOMBE) deposition technique, which has demonstrated superior flux control than that achieved by MBE, to be realized in the heteroepitaxy of HgCdTe on silicon substrates. Other metalorganic deposition procedures, such as MOVPE, may also be employed in the practice of the invention. |