| 摘要 |
A current memory for sampled analogue currents comprises a first, coarse, current memory cell and a second, fine, current memory cell. The first current memory cell senses the input current during a first portion of the first period of the clock cycle, while the second current memory cell senses the input current plus the current produced by the first current memory cell during a second portion of the first period of the clock cycle. The combined outputs of the first and second current memory cells is available during a second period of the clock cycle. The first current memory further comprises a voltage amplifier which increases the effective gm of a memory transistor in the first memory cell and holds the potential at the junction of the drain electrodes of the memory transistors in each of the memory cells close to a virtual earth.
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