Method for producing a semiconductor layer of SiC of the 3C-polytype and a semiconductor device having an insulator between a carrier and the active semiconductor layer

摘要

In a method for producing a semiconductor layer (8) of SiC of the 3C-polytype on top of a semiconductor substrate layer (6) the wafer-bonding technique is utilised. Two amorphous layers are placed face to face and bonded by heating them, and the piece so obtained is annealed at such a high temperature that the material of the amorphous layers is allowed to flow for relaxing a 3C-SiC-layer (4) on top thereof. A second layer (8) of 3C-SiC is after that epitaxially regrown on top of said relaxed 3C-SiC-layer.