| 摘要 |
Power MOSFETs with a source-side load are often triggered by so-called charge pumps. In order to provide a faster turnoff, until now the gate-to-source capacitance of the power MOSFET, which is typically constructed as an enhancement MOSFET, has been discharged through a depletion MOSFET that is parallel to the gate-to-source path. Those different MOSFET types require complicated and expensive production technology. A circuit configuration is proposed that makes it possible to use solely enhancement MOSFETs.
|
