| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory in which a verifying operation time at the time of erasing and writing operation of a non-volatile semiconductor memory is shortened. SOLUTION: After memory data of a batch erasing block is erased by batch erasing and erasing batch verifying operation, writing operation in a memory cell selects this batch erasing block as a writing block by a non-volatile semiconductor memory provided with an erasing batch verification/writing batch verification circuit system (ST111). Next, one page in a writing block is selected, the selected page is written (ST112), writing batch verifying which verifies en bloc a writing state of a memory cell in the written selected page is performed (ST113).</p> |
