| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory in which the read-out speed in accordance with kinds of memory data can be obtained without causing needless power consumption in a word line driving circuit. SOLUTION: In a semiconductor memory storing data of a first kind requiring read-out speed being comparatively high (for example, program data), and data of a second kind being lower read-out speed than that of the data (for example, character font data), the device is provided with two kinds of memory cell arrays I1 , I2 in which its word line length is different from each other, the data of the first kind is stored in the memory cell array I1 in which its word line length is short, and the data of the second kind is stored in the memory cell array I2 in which its word line length is long.</p> |
