| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor having a large area at a low cost by using a simple means. SOLUTION: A film of paste, composed of indium selenide powder, selenium powder, copper chloride powder, and a binder is formed on a molybdenum film on a substrate by screen printing the paste or a film of another paste, composed of the indium selenide powder, the selenium powder, and the binder is formed on a molybdenum film and a copper film successively formed on the substrate by screen-printing the paste. Then a CIS(copper-indium selenide) thin film is formed by heating the applied paste in a vacuum, inert gas atmosphere, or mixed gas prepared by mixing a reducing gas in an inert gas, after drying the paste. |
