TRANSPARENT CONDUCTORS COMPRISING GALLIUM-INDIUM-OXIDE

摘要

Applicant has discovered that aliovalently doped gallium-indium-oxide (GaInO3) can achieve electrical conductivity comparable to wide band-gap semiconductors presently in use while exhibiting enhanced transparency and improved index matching. The material can be doped to resistivity of less than 10 milliohm-cm by small quantities of aliovalent dopants, such as tetravalent at oms. It has a refractive index of about 1.6 and can be deposited on glass substrates in polycrystalline films.