| 摘要 |
PROBLEM TO BE SOLVED: To embody an optical information processor of a high recording density by using a nitride semiconductor as a material for an active layer region and a semiconductor device of a surface light emission type having a perpendicular resonator as a light source in optical information processing. SOLUTION: The base body successively formed with a GaN buffer layer 2, a GaN optical waveguide layer 3, a GaInN/AlGaNDBR structure high reflection film 4 and a GaN optical waveguide layer 5 on a (0001) C-face sapphire single crystal substrate 1 is prepd. The optical resonator formed on the substrate 1 is obtd. by arranging a (p) type GaN optical waveguide layer 7 and an (n) type GaN optical waveguide layer 9 across multiple quantum well active layers 8 consisting of AlGaN light separating and confining layers, GaN quantum barrier layers and GaInN compression strain multiple quantum well layers. An insulator film is formed for the purpose of the growth of a columnar nitride semiconductor crystal on the upper part of the substrate 1. Carriers are implanted from the direction intersecting with the optical axis of the optical resonator of the active layer region by a (p) side electrode 11 and an (n) side electrode 12. |
