SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To prevent degradation or other deterioration of the surface of a metal film when a gate is wired. SOLUTION: A method for manufacturing a semiconductor device is comprised of a process for forming a gate insulating film 15 on a semiconductor substrate 11, a process for forming a wiring film provided with a metal film 18 for gate wiring on the gate insulating film 15, a process for exposing the metal film 18 to an atmosphere in which the metal film 18 is likely to be oxidized, a process for reducing an oxide film formed on the surface of the metal film by the previous process in a reductant atmosphere and a process for forming a protective film 20 on the surface of the metal film 18 reduced by the previous process.