| 摘要 |
PROBLEM TO BE SOLVED: To provide an electron beam projection aligner capable of quick projection exposure of a mask pattern, without causing defects. SOLUTION: This electron beam projection aligner for irradiating an electron beam from an electron gun 1 through a mask 4, having a mask pattern for projection exposure, scans a mask 4 disposed at a projection-exposing position and catches electrons reflected from the mask 4 being scanned to locate dust deposited on the mask. |
