发明名称 DEVICE FOR CONTROLLING READING VOLTAGE OF SEMICONDUCTOR STORAGE
摘要 <p>PROBLEM TO BE SOLVED: To obtain a reading voltage controlling device of a semiconductor storage that can select the pulse width of a voltage pulse supplied to a cell, reduce variation in the reading voltage of cells, and reduce a judgment time. SOLUTION: A device has a writing pulse generation part 21 for generating a writing pulse with an arbitrary wavelength and supplies a writing pulse with a wavelength being generated from the writing pulse generation part 21 to a specified transistor memory 7. Then, when a writing pulse with a shorter wavelength than before is supplied, the variation in reading voltages of a plurality of transistor memories 7 can be reduced, thus enabling the transistor memory 7 with poor retention characteristics to be discovered easily and the quality can be improved when an acceleration test is executed in baking and burn-in.</p>
申请公布号 JPH10222994(A) 申请公布日期 1998.08.21
申请号 JP19970024078 申请日期 1997.02.06
申请人 MITSUBISHI ELECTRIC CORP 发明人 MATSUMOTO HIROYUKI
分类号 G11C16/06;G11C16/10;G11C16/34;G11C29/06;G11C29/50;(IPC1-7):G11C16/06;G11C29/00 主分类号 G11C16/06
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