摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a reading voltage controlling device of a semiconductor storage that can select the pulse width of a voltage pulse supplied to a cell, reduce variation in the reading voltage of cells, and reduce a judgment time. SOLUTION: A device has a writing pulse generation part 21 for generating a writing pulse with an arbitrary wavelength and supplies a writing pulse with a wavelength being generated from the writing pulse generation part 21 to a specified transistor memory 7. Then, when a writing pulse with a shorter wavelength than before is supplied, the variation in reading voltages of a plurality of transistor memories 7 can be reduced, thus enabling the transistor memory 7 with poor retention characteristics to be discovered easily and the quality can be improved when an acceleration test is executed in baking and burn-in.</p> |