| 摘要 |
PROBLEM TO BE SOLVED: To reduce isolated regions to realize a high integration, by isolating memory elements through first and second isolating regions in axial directions Y and X respectively. SOLUTION: Mutually parallel active regions 1' continuous in the X-axis direction but at a specified spaces in the Y-axis direction and mutually parallel first isolating regions arranged between the active regions are formed on a semiconductor substrate with word lines 21-24 formed in the Y-axis direction. In an Si substrate between the word lines 21-24 sources 25 and drains 26 doped with a first conductivity type impurity are formed to form memory elements. To isolate the memory elements having the word lines, sources and drains second isolating regions 27 doped with a second conductivity type impurity opposite to the first conductivity type impurity are formed on specified points of the active regions. |
