| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a flexible structure. SOLUTION: After hydrogen has been injected into an Si substrate 1 to a prescribed depth and a gate insulating film 2 and a gate 3 have been formed on the substrate 1, source and drain regions 4 are formed in the substrate. On the other hand, an SiO2 layer is formed on a second Si substrate. When heat treatment is performed, while the SiO2 layers on the substrate 1 and the second substrate are press-contacted with each other, the substrate 1 is divided into two parts from the hydrogen-injected region. The thinned substrate 1 is stuck to a flexible substrate 8, and the second Si substrate is removed by selectively etching the SiO2 layer on the second substrate. Since a semiconductor element, having a thickness of <=1μm, can be formed on the flexible substrate 8 in this way, a semiconductor device having a flexible structure can be obtained.
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