INSULATION FILM, SEMICONDUCTOR DEVICE HAVING THE SAME AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a low-dielectric const. wiring layer insulation amorphous fluorocarbon film durable to actual processes and manufacturing method thereof. SOLUTION: On both surface of an amorphous fluorcarbon film 43 inserted between wiring layers 3, 6, a diamond-like carbon film and Si-rich layer are disposed to greatly improve the adhesion to wirings adjust thereto and other insulation films. An Si type insulation film is laid on a multilayer substrate including the amorphous fluorocarbon film 43 having buried wiring layers 3, 6 to planarize it, and using this Si insulation film as a mask, the diamond-like carbon film and fluorocarbon layer 43 are anisotropically etched with an O- plasma to form via hole 7.