| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a susceptor which prevents a phenomenon that the dopant concn. in an epitaxial layer rises at the wafer periphery. SOLUTION: In a wafer pocket 6, holes 7 are bored through the periphery of a wafer to its back surface, thereby forming a flow downwards from the top face of a susceptor 5, together with a dopet species discharged over the back face. This prevents the dopant species from sneaking over the surface of a wafer 8, thereby suppressing the dopant concn. rise at the periphery of an epitaxial layer 9.</p> |
