CHIP THERMISTOR AND PRODUCTION THEREOF

摘要

PROBLEM TO BE SOLVED: To protect a chip thermistor element against corrosion in plating while preventing protrusion of plating by forming a plating layer after applying a silane based compound denoted by a specified formula to the entire surface of the thermistor element on which a terminal electrode is formed. SOLUTION: A chip thermistor element 1, on which a terminal electrode 2A is formed, is immersed into an aqueous solution of silane based compound and then dried thus applying the silane based compound to the entire surface of the chip thermistor element 1. The silane based compound is shown by a formula (R<1> )x Si(OR<2> )4-x , where R<1> is a methyl group, an ethyl group, a propyl group or a butyl group, R<2> is an alkyl group, X is 1, 2 or 3. After a coating layer 4 of silane based compound is formed, an Ni plating layer 2B and a solder plating layer 2C are formed.