| 摘要 |
<p>PROBLEM TO BE SOLVED: To facilitate the evaluation of a shallow part under the surface of a specimen to be conducted by the use of a SIMS(secondary ion mass- spectrometry) device. SOLUTION: An oxide film 21 having oxygen elements to suppres generation of a saturated region in the depth-secondary ion intensity characteristics is formed on the surface of a Si board 20 by means of hating and oxidization. The oxide film 21 takes in the impurities 50 existing on the surface of the Si board 20. Then the specimen is placed in the specified position on a SIMS device, and evaluation of the oxide film 21 is executed. The oxide film 21 reduces the incident ion effect. This heightens the accuracy of the secondary ion intensity ratio of the specimen surface and facilitates evaluation of the specimen surface.</p> |
