| 摘要 |
PROBLEM TO BE SOLVED: To form narrow through holes having no work modified layer through a silicon electrode plate by passing a wire through the holes and sliding the wire in the holes while paste containing abrasive grains is applied to the wire. SOLUTION: A silicon electrode plate 12 with narrow through holes 5 respectively having finished inside diameters of 0.2mm, 0.3mm, 0.4mm, 0.5mm, 0.6mm, and 0.8mm is manufactured by removing work damage layers 9 on the internal surfaces of the holes 5 by passing a wire 11 having a small diameter of 0.01mm through the holes 5 after the front end of the wire 11 is made thinner by etching and sliding the wire 11 in the holes 5 while paste 13 containing abrasive grains is applied to the wire 11, and then, completely removing the work modified layers 9 from the surface of the electrode plate 2 by removing the surface of the plate 2 to a depth of 2mm and smoothening the internal surfaces of the holes 5 by etching. Therefore, a silicon electrode plate for plasma etching having narrow through holes 5 containing no work modified layer can be manufactured. |
