摘要 |
<p>PROBLEM TO BE SOLVED: To receive an incident light, without increasing the chip area and without reducing a photovoltaic force by bonding a compd. semiconductor substrate used for forming a light emitting element to a single crystal Si substrate through an insulation film. SOLUTION: Onto one main surface of a single crystal Si substrate 1 a GaAs substrate 3 is bonded through an Si oxide film 2. On the substrate 1 a light emitting element 5 is formed, facing a photo detector 4 to receive an incident light from the light emitting element, thereby ensuring a dielectric strength between the input and output and realizing a low-cost photo coupler type device and thin film element. The light emitting element faces the photo detector through an insulation film, and this ensures a high light-emission efficiency to the photo detector. Thus the incident light can be received, without increasing the chip area and without lowering the photovoltaic force.</p> |