发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To receive an incident light, without increasing the chip area and without reducing a photovoltaic force by bonding a compd. semiconductor substrate used for forming a light emitting element to a single crystal Si substrate through an insulation film. SOLUTION: Onto one main surface of a single crystal Si substrate 1 a GaAs substrate 3 is bonded through an Si oxide film 2. On the substrate 1 a light emitting element 5 is formed, facing a photo detector 4 to receive an incident light from the light emitting element, thereby ensuring a dielectric strength between the input and output and realizing a low-cost photo coupler type device and thin film element. The light emitting element faces the photo detector through an insulation film, and this ensures a high light-emission efficiency to the photo detector. Thus the incident light can be received, without increasing the chip area and without lowering the photovoltaic force.</p>
申请公布号 JPH10223878(A) 申请公布日期 1998.08.21
申请号 JP19970019029 申请日期 1997.01.31
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 SUZUMURA MASAHIKO;TAKANO YOSHIMICHI;KISHIDA TAKASHI;SHIRAI YOSHIFUMI;HAYAZAKI YOSHIKI;SUZUKI YUJI
分类号 H01L27/14;H01L21/02;H01L27/12;H01L27/15;H01L31/12;(IPC1-7):H01L27/15 主分类号 H01L27/14
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