| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a ferroelectric thin film element consisting of a compound film of a Bi layer type structure, which enables a reduction in a film-forming temperature, a reduction of time and the simplification of a production process, the ferroelectric thin film element and a ferroelectric memory element. SOLUTION: A method of manufacturing a ferroelectric thin film element of a structure, wherein a lower electrode, a ferroelectric thin film and an upper electrode are provided in order on a substrate, comprises a process (S10) of applying a precursor solution, which contains a metallic element constituting a ferroelectrics, on the surface of the above lower electrode formed on the substrate, a process (S11), wherein the applied presursor solution is heated to remove a solvent only from the solution and to dry the precursor solution, a first heat-treating process (S13), wherein the dried precursor is heated in an atmosphere of a gas pressure lower than one atmospheric pressure to form a ferroelectric thin film, and a second heat-treating process (S15), wherein after the upper electrode is formed on the ferroelectric thin film, the upper electrode is heated in a nitrogen atmosphere. |
