| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device which can stably make multi-mode oscillation by making the width of a current route narrower than that of an electric field distribution area by forming an AlOz1 area and an AlOz2 area which respectively specify the widths of the current route and electric field distribution area by selectively oxidizing first Alx Ga1-x As layer and a second Aly Ga1-y As layer. SOLUTION: AlOz areas (oxide layers) 33 and 34 are respectively formed in a p-type Al0.95 Ga0.05 As layer 28 and a p-type Al0.98 Ga0.02 As layer 29 having different percentages composition by selectively oxidizing the layers 28 and 29. Since the layers 28 and 29 contain Al at different percentages, the selective oxidizing speeds of the layers 28 and 29 become different from each other. Therefore, when the percentages of Al in the layers 28 and 29 are made different from each other, the widths of the AlOz areas 33 and 34 can be made different from each other and the width of a current route specified by the AlOz2 area 34 formed in the layer 29 can be made narrower than that of an electric field distribution area specified by the AlOz1 area 33 formed in the layer 28. In addition, stable multi-mode oscillation can be realized, because the widths of the route and area can be set separately by independently controlling the percentages composition of the layers 28 and 29 when the percentages are adjusted in advance. |
