发明名称 Semiconductor device production
摘要 Production of a semiconductor device comprises forming a polyimide based resin layer as intermediate insulating layer and coating the resin layer with an insulating layer. During the process, permeation of reaction products originating from the amidation, on heating the polyimide-based resin layer to a prescribed temperature before heat treating to degas the resin layer.
申请公布号 DE19806334(A1) 申请公布日期 1998.08.20
申请号 DE1998106334 申请日期 1998.02.05
申请人 NEC CORP., TOKIO/TOKYO, JP 发明人 IGARASHI, KINICHI, YAMAGATA, JP;SATO, HIDEAKI, YAMAGATA, JP
分类号 H01L21/312;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/312;H01L21/314 主分类号 H01L21/312
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