Silicon carbide product for vertical electronic device structure

摘要

A novel silicon carbide product comprises (i) a 4H-poly-type crystallised single crystal substrate (1) with first conductivity type doping; and (ii) a 6H- and/or 3C-poly-type crystallised main layer (4) with first conductivity type doping grown on the main substrate surface (2), the doping of the main layer (4) being lighter than that of the substrate (1). Preferably, the main surface is parallel, to within 15 deg , to the (000-1) plane of the 4H-poly-type and a first conductivity type doped 4H-poly-type crystallised interlayer (3) is grown between the main surface (2) and the main layer (2). Also claimed is production of the above product by epitaxially growing the main layer (4) over the main surface (2) of the substrate (1), preferably by molecular beam, gas phase or sublimation epitaxy.