Schottky diode with semiconductor substrate of first doping type esp. for signal processing

摘要

The diode has its substrate (1) of the first doping type of first doping density (n1) locating an epitaxial layer (2) of the same doping type but a lower, second doping density (n2), on which is deposited an insulating film (3) with an aperture (4). At least part of the insulating film and epitaxial layer under the aperture are covered by a Schottky metal film (5). In the epitaxial layer, an annular semiconductor region (6) of a second doping type with a third doping density (n3), higher than the second one, is formed adjacent to the insulating film and the metal film. In the epitaxial layer a first type doping region (7) with a fourth doping density (n4), is located adjacent to the Schottky metal film, with second doping density lower than the fourth one.