Halbleiterkörper

摘要

The invention relates to a semiconductor part comprising a semiconductor substrate (10) with a first oxide layer (14), a covering semiconductive layer (16) and a second oxide layer (18) arranged on top of the latter. In a contact hole area, said layers are penetrated by a first metallization layer (20) for contacting the semiconductor substrate (10). A phosphorus-doped oxide layer (22) is placed on the first metallization layer (20), which prevents mobile ions from penetrating into the first oxide layer (14) and the dielectric strength/drift resistance of the components integrated into the semiconductor part from being reduced.