发明名称 SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME
摘要 A semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step, there is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device's electric characteristics.
申请公布号 WO9836452(A1) 申请公布日期 1998.08.20
申请号 WO1998JP00671 申请日期 1998.02.18
申请人 HITACHI, LTD.;HITACHI ULSI ENGINEERING CORPORATION;ISHITSUKA, NORIO;MIURA, HIDEO;IKEDA, SHUJI;SUZUKI, NORIO;MATSUDA, YASUSHI;YOSHIDA, YASUKO;YAMAMOTO, HIROHIKO;KOBAYASHI, MASAMICHI;TAKAMATSU, AKIRA;SHIMIZU, HIROFUMI;FUKUDA, KAZUSHI;HORIBE, SHINICHI;NOZOE, TOSHIO 发明人 ISHITSUKA, NORIO;MIURA, HIDEO;IKEDA, SHUJI;SUZUKI, NORIO;MATSUDA, YASUSHI;YOSHIDA, YASUKO;YAMAMOTO, HIROHIKO;KOBAYASHI, MASAMICHI;TAKAMATSU, AKIRA;SHIMIZU, HIROFUMI;FUKUDA, KAZUSHI;HORIBE, SHINICHI;NOZOE, TOSHIO
分类号 H01L21/31;H01L21/76;H01L21/762 主分类号 H01L21/31
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