MOSFET structure with first conductivity-type semiconductor substrate

摘要

The structure contains a drain (86), a spaced source (88) of second conductivity-type, and a gate electrode (94). On the substrate (84) is deposited a second conductivity-type layer (82), on whose surface are formed low doped drain and source, with the latter formed in the layer channel (92) of first conductivity-type. The gate electrode is located on the surface of the layer and channel and contains an edge (96) aligned with the source. The layer contains a region (98), extending from the drain and having an edge aligned with the opposite edge (102) of the gate electrode. The region has a second conductivity-type doping concentration, between that of the source and drain and that of the layer.