| 摘要 |
<p>According to the inventive method for making a structured metallization (30) on a semiconductor wafer (20), consisting in applying a passivation layer onto the main surface of the wafer for the purpose of securing a bond pad (24), a metal hump (26) is formed on at least one bond pad (24). Then, in the passivation layer areas (22) where the structured metallization is to be effected, an activated dielectric is created (28). Therafter, metal is chemically precipitated on both the dielectric (28) and the metal hump (26), so that the structured metallization on the activated dielectric and the metal chemically precipitated on said metal hump are electroconductively connected.</p> |
| 申请人 |
FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V., 80636 MUENCHEN, DE |
发明人 |
ASCHENBRENNER, ROLF, DIPL.-PHYS., 12203 BERLIN, DE;AZDASHT, GHASSEM, DIPL.-ING., 14052 BERLIN, DE;ZAKEL, ELKE, DR.-ING., 14612 FALKENSEE, DE;OSTMANN, ANDREAS, DIPL.-PHYS., 10585 BERLIN, DE;MOTULLA, GERALD, DIPL.-ING., 13357 BERLIN, DE |
