Silicon carbide product for microelectronic device

摘要

A novel silicon carbide product comprises: (i) a 4H-poly-type crystallised single crystal substrate (1) with first conductivity type doping; (ii) a 6H- and/or 3C-polytype crystallised main layer (4) with first conductivity type doping, grown on the main substrate surface (2); and (iii) an FET structure (5-10) embedded in the main layer (4) and having a channel region (9), which extends at least partially within the main layer (4), and a drain region (1), which lies at least partially below the main layer (4) and which is associated with a drain electrode (10) on the opposite surface (11) of the substrate (1). Also claimed is the production of the above product by epitaxially growing the main layer (4) over the main surface (2) of the substrate (1) and embedding the FET structure (5-10).