发明名称 |
Semiconductor device with a self-aligned structure |
摘要 |
In the production of a semiconductor body having a first self-aligned structure region (A) and a remaining second region (B), involving applying and structuring an oxide layer (22) on the body front face and then applying a semiconductor layer (24) and an insulation layer (26), the process further comprises: (a) structuring the insulation layer (26), by photo-technology and subsequent etching, to remove the layer entirely from the second region (B) while leaving it on at least part of the first region (A); and (b) employing photo-technology and subsequent etching to structure the semiconductor layer (24) and the portions consisting of the insulation layer (26) and the semiconductor layer (24). Preferably, a number of DMOSFETs are integrated in the first region (A). |
申请公布号 |
EP0859401(A2) |
申请公布日期 |
1998.08.19 |
申请号 |
EP19980100724 |
申请日期 |
1998.01.16 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
STECHER, MATTIHAS, DR.;PERI, HERMANN |
分类号 |
H01L21/336;H01L21/60;H01L21/8234;H01L29/06;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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