| 摘要 |
MOSFET 8 is bonded via an edge surface 9b to a ceramic plate 10 which in turn is bonded to a copper bar 11 which acts as a heat sink. Thermal energy is dissipated via the edge surface 9b which because of its relatively small area compared to the major surfaces 8a and 8b of the component presents a lower capacitance than in a conventional arrangement in which the component is mounted via its major surface. The arrangement is particularly suitable for high frequency applications. |
