发明名称 |
Method of fabricating a semiconductor layer,method of fabricating a semiconductor laser,and a semiconductor laser |
摘要 |
A method of making a semi conductor layer comprises using a gaseous compound such as trimethyl arsine or tributyl arsine for depositing the layer, which compound does not generate hydrogen radicals. The layer is part of a double heterostructure semi conductor laser. |
申请公布号 |
GB9813198(D0) |
申请公布日期 |
1998.08.19 |
申请号 |
GB19980013198 |
申请日期 |
1995.09.05 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
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分类号 |
C30B25/02;H01L21/203;H01S5/20;H01S5/22;H01S5/223;H01S5/227;H01S5/30;H01S5/343 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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