发明名称 Method of fabricating a semiconductor layer,method of fabricating a semiconductor laser,and a semiconductor laser
摘要 A method of making a semi conductor layer comprises using a gaseous compound such as trimethyl arsine or tributyl arsine for depositing the layer, which compound does not generate hydrogen radicals. The layer is part of a double heterostructure semi conductor laser.
申请公布号 GB9813198(D0) 申请公布日期 1998.08.19
申请号 GB19980013198 申请日期 1995.09.05
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人
分类号 C30B25/02;H01L21/203;H01S5/20;H01S5/22;H01S5/223;H01S5/227;H01S5/30;H01S5/343 主分类号 C30B25/02
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