发明名称 DEVICE AND METHOD FOR CONTINUOUS VAPOR-DEPOSITION ON FILM
摘要 <p>This invention provides the best design regarding the number and positioning of the projecting points so as to attain the uniformity in the width direction and the optimum productivity using the plural EB guns/plural projecting points, therefor provides an appatatus and process for continuous vapor deposition to a film which enables a formation of thin layer having an improved uniformity and precision. This invention relates to the apparatus satisfying the following faetures in an apparatus whereby a thin layer or plural number of thin layers composed of a dielectric substance or metal are continuously formed onto a running organic polymer film in the width range wider than 500mm, in the vapor deposition system that a vapor deposition substance is introduced to and kept in the hearth moving at a constant speed and continuously moved for a projecting point of electron beam, (1)To have at least two projecting points of electron beam in the width direction of the film with respect to one kind of vapor deposition substance. (2)The vertical distance between the projecting point of electron beam and the running surface of the film is not less than 300mm. (3)Both moving direction and moving speed of the hearth can be set independently in each hearth. (4)A compensator suitable for attaining an uniform vapor deposition speed in the width direction of the film is equipped between the projecting point of electron beam and the running surface of the film.</p>
申请公布号 EP0859069(A1) 申请公布日期 1998.08.19
申请号 EP19970917452 申请日期 1997.04.21
申请人 TOYO METALLIZING CO.,LTD. 发明人 TOHYAMA, SHUNROKU;AOYAGI, TSUTOMU;MOCHIZUKI, KIYOHITO;TANI, SATORU
分类号 G02B1/10;C23C14/24;C23C14/30;C23C14/56;(IPC1-7):C23C14/30 主分类号 G02B1/10
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