发明名称 ANTIFUSE STRUCTURE AND PROCESS FOR MANUFACTURING THE SAME
摘要 <p>An antifuse may include one or more interfacial oxide film layers surrounding an antifuse dielectric layer to provide narrowing of the antifuse programming voltage distribution and to improve the antifuse yield and long term reliability.</p>
申请公布号 EP0858675(A1) 申请公布日期 1998.08.19
申请号 EP19960937802 申请日期 1996.10.30
申请人 UNITED TECHNOLOGIES CORPORATION 发明人 HUMPHREY, KURT, D.;HOLWAY, BRADLEY, S.;HAFER, CRAIG
分类号 H01L21/82;H01L23/525;(IPC1-7):H01L23/525 主分类号 H01L21/82
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