| 摘要 |
<p>A heat sink material for use with a semiconductor component having a coefficient of thermal expansion near to that of a semiconductor material and a high thermal conductivity, comprising a plurality of diamond particles, a metal, and a metal carbide, wherein the metal carbide and diamond particles constitute the matrix, and the metal fills the interstices of the matrix is provided. Also disclosed are a method for fabricating the same and a semiconductor package using the same.</p> |
