Method of fabricating semiconductor device

摘要

Method of fabricating a thin-film transistor. This transistor has a semiconductor such as a silicon semiconductor. This semiconductor is irradiated with pulsed laser light having a pulse width which is set greater than 1 mu s to maintain molten state of the silicon surface for a long time. As a result, a silicon film having high crystallinity can be obtained. This scheme can be used for crystallization of an amorphous silicon film and for activation effected after implantation of impurity ions.