| 发明名称 |
Silicon resonant tunneling |
| 摘要 |
A resonant tunneling diode (400) made of a silicon quantum well (406) with silicon oxide tunneling barriers (404, 408). The tunneling barriers have openings (430) of size smaller than the electron wave packet spread to insure crystal alignment through the diode without affecting the tunneling barrier height.
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| 申请公布号 |
US5796119(A) |
申请公布日期 |
1998.08.18 |
| 申请号 |
US19930145267 |
申请日期 |
1993.10.29 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SEABAUGH, ALAN C. |
| 分类号 |
H01L29/872;H01L21/329;H01L29/06;H01L29/47;H01L29/66;H01L29/88;(IPC1-7):H01L29/04 |
主分类号 |
H01L29/872 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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