发明名称 |
Semiconductor device capacitor having lower electrodes separated by low dielectric spacer material |
摘要 |
In a semiconductor device having a ferroelectric capacitor and manufacturing method thereof, a spacer comprising a low dielectric material is formed on the side surfaces of a plurality of lower electrodes separated into each cell unit, and a ferroelectric film is formed on the lower electrodes whereon the low dielectric material spacer is formed, and an upper electrode is formed on the ferroelectric film, to thereby prevent an error which may be caused between the adjacent lower electrodes.
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申请公布号 |
US5796133(A) |
申请公布日期 |
1998.08.18 |
申请号 |
US19970782827 |
申请日期 |
1997.01.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWON, KEE-WON;KANG, CHANG-SEOK |
分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/10;H01L27/105;H01L27/108;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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