Metal semiconductor field effect transistor (MESFET) device with single layer integrated metal

摘要

A periodic table group III-IV metal semiconductor metal field-effect transistor device is described. The disclosed device includes single metalization for ohmic and Schottky barrier contacts, an elective permanent etch stop layer, a non-alloyed ohmic contact semiconductor layer and a permanent non photosensitive secondary mask element. The invention may be achieved with one of an all optical lithographic process and a combined optical and electron beam lithographic process The disclosed field-effect transistor device is of reduced fabrication cost, increased dimensional accuracy and state of the art electrical performance.