Method for forming shallow junction for semiconductor device

摘要

A method for forming a shallow junction of a semiconductor device using a zirconium film to cover a semiconductor substrate and implanting impurities into the zirconium film. A titanium film is then formed over the zirconium film and both the zirconium and the titanium films are subjected to a thermal treatment to form a zirconium silicide and a titanium silicide. Unreacted parts of the zirconium film and titanium film are removed and the zirconium and titanium silicides are then subject to a second thermal treatment.