Circuit for the selection of redundant memory elements and flash EEPROM memory comprising said circuit

摘要

In order to carry out the automatic selection of redundant memory elements (rows or columns) to replace defective elements, the addresses of the elements to be replaced are compared with the current address. In order to improve the reliability by reducing the number of non-volatile memory cells normally containing the addresses of the elements to be replaced, the selection circuit has means to compute certain of these addresses from an actually stored address. Application notably to FLASH EEPROMs.