发明名称 |
Structure for a parasitic capacitor and a storage capacitor in a thin film transistor-liquid crystal display and a method for making the same |
摘要 |
The present invention includes a drain of the TFT which operates as a first upper electrode of the parasitic capacitor. A second upper electrode of the storage capacitor overlaps with the pixel electrode. An insulating layer is disposed between the second upper electrode and the pixel electrode. An insulating layer is also disposed between a first lower electrode of the parasitic capacitor at its associated upper electrode, as well as a second lower electrode of the storage capacitor and its associated upper electrode. Further, the overlapping direction of the two upper electrodes is identical with that of the two lower electrodes so that an undesired dc-offset voltage is made proportional between each of the pixels in the TFT-LCD array.
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申请公布号 |
US5796448(A) |
申请公布日期 |
1998.08.18 |
申请号 |
US19960593244 |
申请日期 |
1996.01.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, DONG-GYU |
分类号 |
G02F1/1362;G02F1/1368;(IPC1-7):G02F1/134;G02F1/136 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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