| 摘要 |
A temperature sensor using doped polysilicon resistors in a bridge configuration, an amplifier, and a doped polysilicon feedback resistor between the input and the output of the amplifier. The polysilicon resistors are doped with selected concentrations of impurities such as boron, phosphorus, arsenic or antimony. The resistors are doped to establish predetermined temperature coefficients so that the resistors exhibit a predetermined temperature dependence. This temperature dependence is utilized to create a temperature sensor that is stable, accurate, and rugged and that has a generally linear output to temperature response.
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