摘要 |
A fabrication process for integrating stacked capacitor, DRAM devices, and thin film transistor, SRAM devices, has been developed. The fabrication process features combining key operations used to create transfer gate transistor structures, and access transistor structures for the DRAM and SRAM devices. In addition, process steps, used to create a capacitor structure, for the DRAM device, and a thin film transistor structure, for the SRAM device, are also shared. Another key feature of this invention is a buried contact structure, used for the SRAM device.
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申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIANG, MONG-SONG;WUU, SHOU-GWO;WANG, CHEN-JONG;SU, CHUNG-HUI |