Method for planarizing wide bandgap semiconductor devices

摘要

A method of planarizing wide bandgap semiconductor devices selected from a group including SiC, GaN and diamond having a mesa defined thereon by a trench with a depth of 1 to 2 micrometers and a width of 2 to 10 micrometers. A layer of dielectric material is deposited on the substrate overlying and surrounding the mesa, to a height approximately equal to the height of the mesa and the dielectric material is etched from atop the mesa and from a surrounding area. Layers of spin on glass are deposited to fill the surrounding area and etched to achieve a planar surface including the mesa and the layer of dielectric material.