| 摘要 |
PROBLEM TO BE SOLVED: To obtain an element having high puncture voltage hardly causing increase of resistance, in barium titanate-based semiconductor porcelain materials having positive temperature coefficient of resistance. SOLUTION: This barium titanate-based semiconductor porcelain having high puncture voltage, hardly causing increase of resistance and further having positive temperature coefficient of resistance is obtained by adding 0.0005-0.0024mol Y and 0.0005-0.002mol Nb to barium titanate as elements for forming the semiconductor to form 20-30μm crystalline particle diameter of Y and 1.0-5.0μm crystalline particle. |
