FABRICATION METHOD OF MOSFET,申请号KR19890009316-传众专利搜索

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发明名称	FABRICATION METHOD OF MOSFET
摘要
申请公布号	KR0142875(B1)	申请公布日期	1998.08.17
申请号	KR19890009316	申请日期	1989.06.30
申请人	LG SEMICONDUCTOR CO.,LTD	发明人	HAN, SUK-WOO
分类号	H01L21/336;(IPC1-7):H01L21/336	主分类号	H01L21/336
代理机构		代理人
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